Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study.

ABSTRACT: The growth of graphene on silicon carbide on silicon offers a very attractive route towards novel wafer-scale photonic and electronic devices that are easy to fabricate and can be integrated in silicon manufacturing. Using a Ni/Cu catalyst for the epitaxial growth of graphene has been successful in the mitigation of the very defective nature of the underlying silicon carbide on silicon, leading to a consistent graphene coverage over large scales. A more detailed understanding of this growth mechanism is warranted in order to further optimise the catalyst composition, preferably via the use of operando characterization measurements. Here, we report in situ neutron reflectometry measurements of (Ni, Cu)/SiC films on silicon wafers, annealed from room temperature to 1100

SUBMITTER: Pradeepkumar A 

PROVIDER: S-EPMC10797600 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature