Leakage Mechanism and Cycling Behavior of Ferroelectric Al_0.7Sc_0.3N.

ABSTRACT: Ferroelectric scandium-doped aluminum nitride (Al_1-xSc_xN) is of considerable research interest because of its superior ferroelectricity. Studies indicate that Al_1-xSc_xN may suffer from a high leakage current, which can hinder further thickness scaling and long-term reliability. In this work, we systematically investigate the origin of the leakage current in Al_0.7Sc_0.3N films via experiments and theoretical calculations. The results reveal that the leakage may originate from the nitrogen vacancies with positively charged states and fits well with the trap-assisted Poole-Frenkel (P-F) emission. Moreover, we examine the cycling behavior of ferroelectric Al_0.7Sc_0.3N-based FeRAM devices. We observe that the

SUBMITTER: Chen L 

PROVIDER: S-EPMC10817578 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature