Optoelectronic Properties of Cold Plasma-Deposited, Oxidized Sn-C Thin Films.

ABSTRACT: We report on investigating the structural and electronic properties of semiconducting and insulating layers produced in a process resembling percolation in a unique cold plasma fabrication method (plasma-enhanced chemical vapor deposition-PECVD). Amorphous carbon-tin films (Sn-C) produced from tetramethyl tin (TMT) with an acoustic-frequency glow discharge in a three-electrode reactor were investigated. The layers, after air exposure, oxidized to SnO₂/Sn-C. Depending on the coupling capacitance applied to the plasma reactor, the films could be obtained in the form of an amorphous semiconductor or an amorphous insulator. We assume that the semiconductor consists of an internal network of channels auto-organized during deposition. The insulator does not demonstrate any internal st

SUBMITTER: Fratczak EZ 

PROVIDER: S-EPMC10817613 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature