Interface Properties of MoS₂ van der Waals Heterojunctions with GaN.

ABSTRACT: The combination of the unique physical properties of molybdenum disulfide (MoS₂) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS₂/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS₂ was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS₂/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopi

SUBMITTER: Panasci SE 

PROVIDER: S-EPMC10818867 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature