Structural and Photoelectronic Properties of κ-Ga₂O₃ Thin Films Grown on Polycrystalline Diamond Substrates.

ABSTRACT: Orthorhombic κ-Ga₂O₃ thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-Ga₂O₃ epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This pave

SUBMITTER: Girolami M 

PROVIDER: S-EPMC10820879 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature