Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi_0.4Sb_0.6)₂Te₃.

ABSTRACT: The exploration initiated by the discovery of the topological insulator (Bi_xSb_1-x)₂Te₃ has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi_0.4Sb_0.6)₂Te₃ (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray d

SUBMITTER: Gultom P 

PROVIDER: S-EPMC10821443 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature