High verticality vapor-liquid-solid growth of GaAs_0.99Bi_0.01 nanowires using Ga-Bi assisted catalytic droplets.

ABSTRACT: GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near- and mid-infrared wavelengths due to the optical properties of the Bi-containing compound and the nanowire structure benefits. In general, synthesizing the GaAsBi NWs results in uncontrollable metamorphic structures and spontaneous Bi-containing droplets. Here, we explore the potential of using the droplets as catalysts to form GaAsBi nanowires (hence, the vapor-liquid-solid growth mechanism) on GaAs (111) substrates by molecular beam epitaxy. The GaAsBi NWs experience a two-step growth: Bi droplet deposition and GaAsBi nanowire growth. The optimal droplet deposition temperature (250 °C) is defined based on the droplet morphologies. The gradation of growth temperatures of GaAsBi NWs to 250 °C, 300 °C, and 350

SUBMITTER: Himwas C 

PROVIDER: S-EPMC10825910 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature