Enhancing Efficiency in Inverted Quantum Dot Light-Emitting Diodes through Arginine-Modified ZnO Nanoparticle Electron Injection Layer.

ABSTRACT: Many quantum dot light-emitting diodes (QLEDs) utilize ZnO nanoparticles (NPs) as an electron injection layer (EIL). However, the use of the ZnO NP EIL material often results in a charge imbalance within the quantum dot (QD) emitting layer (EML) and exciton quenching at the interface of the QD EML and ZnO NP EIL. To overcome these challenges, we introduced an arginine (Arg) interlayer (IL) onto the ZnO NP EIL. The Arg IL elevated the work function of ZnO NPs, thereby suppressing electron injection into the QD, leading to an improved charge balance within the QDs. Additionally, the inherent insulating nature of the Arg IL prevented direct contact between QDs and ZnO NPs, reducing exciton quenching and consequently improving device efficiency. An inverted QLED (IQLED) utilizing a 20 nm-thick

SUBMITTER: Chae YB 

PROVIDER: S-EPMC10856329 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature