Interfacial Properties of Anisotropic Monolayer SiAs Transistors.

ABSTRACT: The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V₂CO₂, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V₂CO₂, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-typ

SUBMITTER: Zou F 

PROVIDER: S-EPMC10856446 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature