Heterojunction Devices Fabricated from Sprayed n-Type Ga₂O₃, Combined with Sputtered p-Type NiO and Cu₂O.

ABSTRACT: This work reports on the properties of heterojunctions consisting of n-type Ga₂O₃ layers, deposited using ultrasonic spray pyrolysis at high temperature from water-based solution, combined with p-type NiO and Cu₂O counterparts, deposited by radio frequency and reactive, direct-current magnetron sputtering, respectively. After a comprehensive investigation of the properties of the single layers, the fabricated junctions on indium tin oxide (ITO)-coated glass showed high rectification, with an open circuit voltage of 940 mV for Ga₂O₃/Cu₂O and 220 mV for Ga₂O₃/NiO under simulated solar illumination. This demonstrates in praxis the favorable band alignment between the sprayed Ga₂O

SUBMITTER: Dimopoulos T 

PROVIDER: S-EPMC10856998 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature