Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy.

ABSTRACT: Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with [Formula: see text] and [Formula: see text] polarized configurations. The anisotropic strain state

SUBMITTER: Takeuchi K 

PROVIDER: S-EPMC10858272 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature