Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga₂O₃/NiO Semiconductors.

ABSTRACT: Recent advancements in power electronics have been driven by Ga₂O₃-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga₂O₃ power devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers have introduced Ga₂O₃-based NMOS and pseudo-CMOS circuits for integration, but these circuits may either consume more power or increase the design complexity. Hence, this article proposes Ga₂O₃-based CMOS realized using heterogeneous 3D-stacked bilayer ambipolar transistors. These ambipolar transistors consist of HfO₂/NiO/Ga₂O₃/NiO/HfO₂ heterostructures t

SUBMITTER: Yuvaraja S 

PROVIDER: S-EPMC10859899 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature