Stochastic Syncing in Sinusoidally Driven Atomic Orbital Memory.

ABSTRACT: Stochastically fluctuating multiwell systems are a promising route toward physical implementations of energy-based machine learning and neuromorphic hardware. One of the challenges is finding tunable material platforms that exhibit such multiwell behavior and understanding how complex dynamic input signals influence their stochastic response. One such platform is the recently discovered atomic Boltzmann machine, where each stochastic unit is represented by a binary orbital memory state of an individual atom. Here, we investigate the stochastic response of binary orbital memory states to sinusoidal input voltages. Using scanning tunneling microscopy, we investigated orbital memory derived from individual Fe and Co atoms on black phosphorus. We quantify the state residence times as a functio

SUBMITTER: van Weerdenburg WMJ 

PROVIDER: S-EPMC10867893 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature