Formation of electron traps in semiconducting polymers via a slow triple-encounter between trap precursor particles.

ABSTRACT: Already in 2012, Blom et al. reported (Nature Materials 2012, 11, 882) in semiconducting polymers on a general electron-trap density of ≈3 × 10¹⁷ cm^-3, centered at an energy of ≈3.6 eV below vacuum. It was suggested that traps have an extrinsic origin, with the water-oxygen complex [2(H₂O)-O₂] as a possible candidate, based on its electron affinity. However, further evidence is lacking and the origin of universal electron traps remained elusive. Here, in polymer diodes, the temperature-dependence of reversible electron traps is investigated that develop under bias stress slowly over minutes to a density of 2 × 10¹⁷ cm^-3, centered at an energy of 3.6 eV below vacuum. The trap build-up dynamics follows a 3^rd-

SUBMITTER: Sedghi M 

PROVIDER: S-EPMC10868412 | biostudies-literature | 2024

REPOSITORIES: biostudies-literature