Low voltage-driven, high-performance TiO₂ thin film transistors with MHz switching speed.

ABSTRACT: High-speed circuits based on thin film transistors (TFTs) show promising potential applications in biomedical imaging and human-machine interactions. One of the critical requirements for high-speed electronic devices lies in high-frequency switching or amplification at low voltages, typically driven by batteries (∼3.0 V). To date, however, most electrical performances of metal oxide TFTs are measured under direct current (DC) conditions, and their dynamic switching behaviour is scarcely explored and studied systematically. Here in this work, we present low voltage-driven, high-performance TiO₂ thin film transistors, which can be operated at a switching speed of MHz. Our proposed TiO₂ TFTs demonstrated a high on-off ratio of 10⁷, together with a subthreshold

SUBMITTER: Chen X 

PROVIDER: S-EPMC10870196 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature