Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO₃ integrated on Si (100).

ABSTRACT: Lead-free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M₃₁) at frequencies as large as 5 kHz (1.04×10^-14 m²/V² at 1 kHz, and 3.87×10^-15 m²/V² at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained upon cycling upto 6 million times. Our perovskite films ar

SUBMITTER: Parate SK 

PROVIDER: S-EPMC10873356 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature