Phase-engineered synthesis of atomically thin te single crystals with high on-state currents.

ABSTRACT: Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α-Te nanosheets and β-Te nanoribbons (from monolayer to tens of μm) on WS₂ substrates. As the thickness decreases, the α-Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β-Te nanoribbons remain p-type semiconductors with an ON-state current density (I_ON) up to ~ 1527 μA μm^-1 and a mobility as high as ~ 69

SUBMITTER: Zhou J 

PROVIDER: S-EPMC10873424 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature