Electrical Charge Coupling Dominates the Hysteresis Effect of Halide Perovskite Devices.

ABSTRACT: Hysteresis effects in ionic-electronic devices are a valuable resource for the development of switching memory devices that can be used in information storage and brain-like computation. Halide perovskite devices show frequent hysteresis in current-voltage curves that can be harnessed to build effective memristors. These phenomena can be often described by a set of highly nonlinear differential equations that involve current, voltage, and internal state variables, in the style of the famous Hodgkin-Huxley model that accounts for the initiation and temporal response of action potentials in biological neurons. Here we extend the neuron-style models that lead to chemical inductors by introducing a capacitive coupling in the slow relaxation variable. The extended model is able to explain natur

SUBMITTER: Bisquert J 

PROVIDER: S-EPMC10883608 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature