Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform.

ABSTRACT: Implementing stimulated Raman scattering in a low-loss microresonator could lead to Raman lasing. Here, we report the demonstration of an efficient Raman laser with >50% power efficiency in an integrated silicon carbide platform for the first time. By fine-tuning the free spectral range (FSR) of 43 μm-radius silicon carbide microresonators, the Stokes resonance corresponding to the dominant Raman shift of 777 cm^-1 (23.3 THz) is aligned to the center of the Raman gain spectrum, resulting in a low power threshold of 2.5 mW. The peak Raman gain coefficient is estimated to be (0.75 ± 0.15) cm/GW in the 1550 nm band, with an approximate full width at half-maximum of (120 ± 30) GHz. In addition, the microresonator is designed to exhibit normal dispersion at the pump wavelength near 15

SUBMITTER: Li J 

PROVIDER: S-EPMC10885207 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature