Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability.

ABSTRACT: To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing. The thickness-controlled InZnO films were then applied as channel regions, which were fabricated

SUBMITTER: Zhang X 

PROVIDER: S-EPMC10890482 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature