Hydrogen-triggered metal filament rupture in Cu-based resistance switches.

ABSTRACT: Cation-based resistance switches have been considered as promising candidates for memory cells and other novel devices. So far, the most accepted switching processes of such devices are based on the formation/rupture of metallic filaments between two electrodes. Although many recent studies have identified the existence of H₂O (and resulting -OH groups) in such devices, their effects on the switching process are still unclear. In the present work, by taking Cu/Ta₂O₅/Pt device as an example, we have theoretically revealed that H ions may dissociate from -OH groups and accumulate onto the Cu filament in amorphous Ta₂O₅. After that, the adsorbed H ions will induce a series of changes, such as the elongation of the adjacent Cu-Cu bonds, th

SUBMITTER: Xiao B 

PROVIDER: S-EPMC10898265 | biostudies-literature | 2024

REPOSITORIES: biostudies-literature