Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling.

ABSTRACT: III-V semiconductor light-emitting diodes (LEDs) are a promising candidate for demonstrating electroluminescent cooling. However, exceptionally high internal quantum efficiency designs are paramount to achieving this goal. A significant loss mechanism preventing unity internal quantum efficiency in GaAs-based devices is nonradiative surface recombination at the perimeter sidewall. To address this issue, an unconventional LED design is presented, in which the distance from the central current injection area to the device's perimeter is extended while maintaining a constant front contact grid size. This approach effectively moves the perimeter beyond the lateral spread of current at an operating current density of 10¹-10² A/cm². In p-i-n GaAs/InGaP double het

SUBMITTER: van der Krabben LM 

PROVIDER: S-EPMC10902842 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature