Dependence of the Metal-Insulator-Semiconductor Schottky Barrier Height on Insulator Composition.

ABSTRACT: The effects of different high-κ tunnel oxides on the metal-insulator-semiconductor Schottky barrier height (Φ_B) were systematically investigated. While these high-κ interlayers have been previously observed to affect Φ_B, there has never been a clear consensus as to why this Φ_B modulation occurs. Changes in Φ_B were measured when adding 0.5 nm of seven different high-κ oxides to n-Si/Ni contacts with a thin native silicon oxide also present. Depending on the high-κ oxide composition and Φ_B measurement technique, increases in Φ_B up to 0.4 eV and decreases up to 0.2 eV with a high-κ introduction were measured. The results were compared to several different hypotheses regarding the effects of tunnel oxides on Φ_B. The e

SUBMITTER: Davis BE 

PROVIDER: S-EPMC10902844 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature