Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors.

ABSTRACT: Resistive switching devices based on the Au/Ti/TiO₂/Au stack were developed. In addition to standard electrical characterization by means of I-V curves, scanning thermal microscopy was employed to localize the hot spots on the top device surface (linked to conductive nanofilaments, CNFs) and perform in-operando tracking of temperature in such spots. In this way, electrical and thermal responses can be simultaneously recorded and related to each other. In a complementary way, a model for device simulation (based on COMSOL Multiphysics) was implemented in order to link the measured temperature to simulated device temperature maps. The data obtained were employed to calculate the thermal resistance to be used in compact models, such as the Stanford model, for circuit

SUBMITTER: Roldan JB 

PROVIDER: S-EPMC10903745 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature