Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices.

ABSTRACT: As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO₃ and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO₃, the magnetization of the CoFe can be reversed, giving rise to di

SUBMITTER: Vaz DC 

PROVIDER: S-EPMC10907725 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature