Near-Field Control and Imaging of Free Charge Carrier Variations in GaN Nanowires.

ABSTRACT: Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic properties. Here we develop a hybrid scanning probe-based methodology to investigate local variations in electronic structure across individual n-doped GaN NWs integrated into a transistor device. We perform scanning microwave microscopy (SMM), which we combine with scanning gate microscopy (SGM) to determine the free-carrier SMM signal contribution and image local charge carrier density variations. In particular, we find significant variations in free carriers across NWs, with a higher carrier density at the wire facets. By increasing the local carrier density through tip-gating, we find that the tip injects current into the NW wi

SUBMITTER: Berweger S 

PROVIDER: S-EPMC10938853 | biostudies-literature | 2016

REPOSITORIES: biostudies-literature