Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C₈₄ single-molecule transistor.

ABSTRACT: Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C₈₄ single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 μB to 5.1 μB for the ground-state G_N at an electric field strength of 3 - 10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional

SUBMITTER: Wang F 

PROVIDER: S-EPMC10951203 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature