Enhanced Photocharacteristics by Fermi Level Modulating in Sb₂ Te₃ /Bi₂ Se₃ Topological Insulator p-n Junction.

ABSTRACT: Topological insulators have recently received attention in optoelectronic devices because of their high mobility and broadband absorption resulting from their topological surface states. In particular, theoretical and experimental studies have emerged that can improve the spin generation efficiency in a topological insulator-based p-n junction structure called a TPNJ, drawing attention in optospintronics. Recently, research on implementing the TPNJ structure is conducted; however, studies on the device characteristics of the TPNJ structure are still insufficient. In this study, the TPNJ structure is effectively implemented without intermixing by controlling the annealing temperature, and the photocharacteristics appearing in the TPNJ structure are investigated using a cross-pattern that ca

SUBMITTER: Hong SB 

PROVIDER: S-EPMC10953576 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature