Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers.

ABSTRACT: Cu/SiO₂ hybrid bonding presents a promising avenue for achieving high-density interconnects by obviating the need for microbumps and underfills. Traditional copper bonding methods often demand temperatures exceeding 400 °C, prompting recent endeavors to mitigate bonding temperatures through investigations into metal passivation bonding. In this study, we scrutinized the diffusion behavior associated with various metal passivation layers (Platinum, Titanium, Tantalum, and Chromium) in the context of low-temperature direct copper bonding and delved into the essential bonding mechanisms. We observed a deviation from conventional metal-metal bonding factors, such as surface roughness and grain size, in the diffusion behavior. Remarkably, our analysis revealed a pronounced correlatio

SUBMITTER: Jeong MS 

PROVIDER: S-EPMC10954753 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature