High-Performance Memristive Synapse Composed of Ferroelectric ZnVO-Based Schottky Junction.

ABSTRACT: In pursuit of realizing neuromorphic computing devices, we demonstrated the high-performance synaptic functions on the top-to-bottom Au/ZnVO/Pt two-terminal ferroelectric Schottky junction (FSJ) device architecture. The active layer of ZnVO exhibited the ferroelectric characteristics because of the broken lattice-translational symmetry, arising from the incorporation of smaller V⁵⁺ ions into smaller Zn²⁺ host lattice sites. The fabricated FSJ devices displayed an asymmetric hysteresis behavior attributed to the ferroelectric polarization-dependent Schottky field-emission rate difference in between positive and negative bias voltage regions. Additionally, it was observed that the magnitude of the on-state current could be systematically controlled by changing either th

SUBMITTER: Lee Y 

PROVIDER: S-EPMC10974313 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature