Inkjet printed IGZO memristors with volatile and non-volatile switching.

ABSTRACT: Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and - 5 V, respectively, a retention up to 10⁵ s and a memory window up to 100, whereas the c8w switching

SUBMITTER: Franco M 

PROVIDER: S-EPMC10980760 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature