Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics.

ABSTRACT: Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb₂Se₃ and Ge₂Sb₂Se₄Te₁, were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption. By employing these building blocks, the p

SUBMITTER: Wei M 

PROVIDER: S-EPMC10981744 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature