Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells.

ABSTRACT: Enhancing the quality of junctions is crucial for optimizing carrier extraction and suppressing recombination in semiconductor devices. In recent years, metal halide perovskite has emerged as the most promising next-generation material for optoelectronic devices. However, the construction of high-quality perovskite junctions, as well as characterization and understanding of their carrier polarity and density, remains a challenge. In this study, using combined electrical and spectroscopic characterization techniques, we investigate the doping characteristics of perovskite films by remote molecules, which is corroborated by our theoretical simulations indicating Schottky defects consisting of double ions as effective charge dopants. Through a post-treatment process involving a combination of

SUBMITTER: Jiang X 

PROVIDER: S-EPMC10989298 | biostudies-literature | 2024 May

REPOSITORIES: biostudies-literature