Enhanced polarization switching characteristics of HfO₂ ultrathin films via acceptor-donor co-doping.

ABSTRACT: In the realm of ferroelectric memories, HfO₂-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO₂. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO₂. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO₂ polar devices are observed in La^3+<

SUBMITTER: Zhou C 

PROVIDER: S-EPMC10991407 | biostudies-literature | 2024 Apr

REPOSITORIES: biostudies-literature