Real-Time TEM Observation of the Role of Defects on Nickel Silicide Propagation in Silicon Nanowires.

ABSTRACT: Metal silicides have received significant attention due to their high process compatibility, low resistivity, and structural stability. In nanowire (NW) form, they have been widely prepared using metal diffusion into preformed Si NWs, enabling compositionally controlled high-quality metal silicide nanostructures. However, unlocking the full potential of metal silicide NWs for next-generation nanodevices requires an increased level of mechanistic understanding of this diffusion-driven transformation. Herein, using in situ transmission electron microscopy (TEM), we investigated the defect-controlled silicide formation dynamics in one-dimensional NWs. A solution-based synthetic route was developed to form Si NWs anchored to Ni NW stems as an optimal platform for in situ TEM stud

SUBMITTER: Adegoke TE 

PROVIDER: S-EPMC11008354 | biostudies-literature | 2024 Apr

REPOSITORIES: biostudies-literature