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Composition, Optical Resonances, and Doping of InP/InGaP Nanowires for Tandem Solar Cells: a Micro-Raman Analysis.


ABSTRACT: We present a micro-Raman study of InP/InGaP tandem junction photovoltaic nanowires. These nanowires render possible InGaP compositions that cannot be made in thin films due to strain. The micro-Raman spectra acquired along the nanowires reveal the existence of compositional changes in the InGaP alloy associated with the doping sequence. The heavily Zn-doped InxGa1-xP (x is the In molar fraction) side of the tunnel diode is Ga rich, x = 0.25, with respect to the n-type and intrinsic segments of the top cell, which are close to the nominal composition of the NWs (x = 0.35). The p-type end segment is still Ga-rich. Electromagnetic resonances are observed in the tunnel diode. The Raman signal arising from the InGaP side of the tunnel dio

SUBMITTER: Mediavilla I 

PROVIDER: S-EPMC11008355 | biostudies-literature | 2024 Apr

REPOSITORIES: biostudies-literature