Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN.

ABSTRACT: A promising approach for high speed and high power electronics is to integrate two-dimensional (2D) materials with conventional electronic components such as bulk (3D) semiconductors and metals. In this study we explore a basic integration step of inserting a single monolayer MoS2 (1L-MoS2) inside a Au/p-GaN junction and elucidate how it impacts the structural and electrical properties of the junction. Epitaxial 1L-MoS2 in the form of 1-2 μm triangle domains are grown by powder vaporization on a p-doped GaN substrate, and the Au capping layer is deposited by evaporation. Transmission electron microscopy (TEM) of the van der Waals interface indicates that 1L-MoS2 remained distinct and intact between the Au and GaN and that the Au is epitaxial to GaN only when the 1L-MoS2 is present.

SUBMITTER: Ruzmetov D 

PROVIDER: S-EPMC11015431 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature