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Kinetics of N- to M-Polar Switching in Ferroelectric Al1-xScxN Capacitors.


ABSTRACT: Ferroelectric wurtzite-type aluminum scandium nitride (Al1-xScxN) presents unique properties that can enhance the performance of non-volatile memory technologies. The realization of the full potential of Al1-xScxN requires a comprehensive understanding of the mechanism of polarization reversal and domain structure dynamics involved in the ferroelectric switching process. In this work, transient current integration measurements performed by a pulse switching method are combined with domain imaging by piezoresponse force microscopy (PFM) to investigate the kinetics of domain nucleation and wall motion during polarization reversal in Al0.85Sc0.15N capacitors. In the studied electric field range (from 4.4 to 5.6 MV cm-1

SUBMITTER: Guido R 

PROVIDER: S-EPMC11040360 | biostudies-literature | 2024 Apr

REPOSITORIES: biostudies-literature