Selenium-alloyed tellurium oxide for amorphous p-channel transistors.

ABSTRACT: Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. ¹), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays^2-8. However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal-oxide-semiconductor technology and integrated circuits^9-11. Here we introduce a pioneering design strategy for amorphous p-type semiconductors, incorpor

SUBMITTER: Liu A 

PROVIDER: S-EPMC11111403 | biostudies-literature | 2024 May

REPOSITORIES: biostudies-literature