Strain Heterogeneity and Extended Defects in Halide Perovskite Devices.

ABSTRACT: Strain is an important property in halide perovskite semiconductors used for optoelectronic applications because of its ability to influence device efficiency and stability. However, descriptions of strain in these materials are generally limited to bulk averages of bare films, which miss important property-determining heterogeneities that occur on the nanoscale and at interfaces in multilayer device stacks. Here, we present three-dimensional nanoscale strain mapping using Bragg coherent diffraction imaging of individual grains in Cs_0.1FA_0.9Pb(I_0.95Br_0.05)₃ and Cs_0.15FA_0.85SnI₃ (FA = formamidinium) halide perovskite absorbers buried in full solar cell devices. We discover large local strains and strikin

SUBMITTER: Orr KWP 

PROVIDER: S-EPMC11190982 | biostudies-literature | 2024 Jun

REPOSITORIES: biostudies-literature