Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures.

ABSTRACT: Hybrid halide perovskites are attractive candidates for resistive switching memories in neuromorphic computing applications due to their mixed ionic-electronic conductivity. Moreover, their exceptional optoelectronic characteristics make them effective as semiconductors in photovoltaics, opening perspectives for self-powered memory elements. These devices, however, remain unexploited, which is related to the variability in their switching characteristics, weak endurance, and retention, which limit their performance and practical use. To address this challenge, we applied low-dimensional perovskite capping layers onto 3D mixed halide perovskites using two perfluoroarene organic cations, namely (perfluorobenzyl)ammonium and (perfluoro-1,4-phenylene)dimethylammonium iodide, forming Ruddlesden

SUBMITTER: Loizos M 

PROVIDER: S-EPMC11195346 | biostudies-literature | 2024 Jun

REPOSITORIES: biostudies-literature