Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization.

ABSTRACT: Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key alloys for the next generation of embedded phase change memories because of their good thermal stability, allowing their use for the automotive applications. Several studies have investigated GGST crystallization, which takes place in several stages, including phase separation in the amorphous material, the crystallization of the cubic Ge and GST phases before a complete crystallization for higher thermal budget. So far, however, no information is available on the possible changes in density and thickness of such alloys. This paper investigates such variations in density and thickness for a N-doped GGST layer (GGSTN) during isothermal annealing, following the four main stages of its multistep crystallization process. X-ray

SUBMITTER: Remondina J 

PROVIDER: S-EPMC11199619 | biostudies-literature | 2024 Jun

REPOSITORIES: biostudies-literature