Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory.

ABSTRACT: With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation is of paramount importance. Here, we present a systematic array of characterization methods that unravel two distinct voltage-dependent regimes demonstrating the complex interplay between the dynamic capacitive and inductive effects in volatile perovskite-based memristors: (1) a low voltage capacitance-dominant and (2) an inductance-dominant regime evidenced by the highly correlated hysteresis type with nonzero crossing, the impedance responses, and the transient current characteristics. These dynamic capacitance- and inductance-dominant regimes provide fundamental insi

SUBMITTER: Gonzales C 

PROVIDER: S-EPMC11215770 | biostudies-literature | 2024 Jun

REPOSITORIES: biostudies-literature