Lateral Heterostructure Formed by Highly Thermally Conductive Fluorinated Graphene for Efficient Device Thermal Management.

ABSTRACT: The continued miniaturization of chips demands highly thermally conductive materials and effective thermal management strategies. Particularly, the high-field transport of the devices built with 2D materials is limited by self-heating. Here a systematic control of heat flow in single-side fluorinated graphene (FG) with varying degrees of fluorination is reported, revealing a superior room-temperature thermal conductivity as high as 128 W m^-1 K^-1. Monolayer graphene/FG lateral heterostructures with seamless junctions are approached for device fabrication. Efficient in-plane heat removal paths from graphene channel to side FG are created, contributing significant reduction of the channel peak temperature and improvement in the current-carrying capability and power densi

SUBMITTER: Wang F 

PROVIDER: S-EPMC11220650 | biostudies-literature | 2024 Jul

REPOSITORIES: biostudies-literature