The Contact Properties of Monolayer and Multilayer MoS₂-Metal van der Waals Interfaces.

ABSTRACT: The contact resistance formed between MoS₂ and metal electrodes plays a key role in MoS₂-based electronic devices. The Schottky barrier height (SBH) is a crucial parameter for determining the contact resistance. However, the SBH is difficult to modulate because of the strong Fermi-level pinning (FLP) at MoS₂-metal interfaces. Here, we investigate the FLP effect and the contact types of monolayer and multilayer MoS₂-metal van der Waals (vdW) interfaces using density functional theory (DFT) calculations based on Perdew-Burke-Ernzerhof (PBE) level. It has been demonstrated that, compared with monolayer MoS₂-metal close interfaces, the FLP effect can be significantly reduced in monolayer MoS₂-metal vdW interfaces. Furthermore, a

SUBMITTER: Pei X 

PROVIDER: S-EPMC11243427 | biostudies-literature | 2024 Jun

REPOSITORIES: biostudies-literature