Defect Engineering of MoTe₂ via Thiol Treatment for Type III van der Waals Heterojunction Phototransistor.

ABSTRACT: Molybdenum ditelluride (MoTe₂) nanosheets have displayed intriguing physicochemical properties and opto-electric characteristics as a result of their tunable and small band gap (E_g ∼ 1 eV), facilitating concurrent electron and hole transport. Despite the numerous efforts devoted to the development of p-type MoTe₂ field-effect transistors (FETs), the presence of tellurium (Te) point vacancies has caused serious reliability issues. Here, we overcome this major limitation by treating the MoTe₂ surface with thiolated molecules to heal Te vacancies. Comprehensive materials and electrical characterizations provided unambiguous evidence for the efficient chemisorption of butanethiol. Our thiol-treated MoTe₂ FET exhibited a 10-fold incr

SUBMITTER: Jeong Y 

PROVIDER: S-EPMC11256742 | biostudies-literature | 2024 Jul

REPOSITORIES: biostudies-literature