Synthesis of InAl-alloyed Ga₂O₃ nanowires for self-powered ultraviolet detectors by a CVD method.

ABSTRACT: Ga₂O₃ is a kind of wide-band gap semiconductor, which has great potential in deep ultraviolet detection because of its high efficiency and fast response. Doping can improve the photoelectric properties of Ga₂O₃ materials. In this paper, In and Al elements alloyed Ga₂O₃ nanowires (InAl-Ga₂O₃ NWs) were successfully grown on p-GaN using a cost-effective chemical vapor deposition method and a vertical structure. The GaN/InAl-Ga₂O₃ NWs p-n self-powered wide-gap UV photodetector (PD) was constructed based on sputtered gold film as the bottom and top electrodes, and spin coated with polymethyl methacrylate as the insulating layer in the vertical direction. The GaN/InAl-Ga₂O

SUBMITTER: Li B 

PROVIDER: S-EPMC11258963 | biostudies-literature | 2024 Jul

REPOSITORIES: biostudies-literature