CsPbI₃ Perovskite Quantum Dot-Based WORM Memory Device with Intrinsic Ternary States.

ABSTRACT: The migration of mobile ionic halide vacancies is usually considered detrimental to the performance and stability of perovskite optoelectronic devices. Taking advantage of this intrinsic feature, we fabricated a CsPbI₃ perovskite quantum dot (PQD)-based write-once-read-many-times (WORM) memory device with a simple sandwich structure that demonstrates intrinsic ternary states with a high ON/OFF ratio of 10³:10²:1 and a long retention time of 10⁴ s. Through electrochemical impedance spectroscopy, we proved that the resistive switching is achieved by the migration of mobile iodine vacancies (V_Is) under an electric field to form conductive filaments (CFs). Using in situ conductive atomic force microscopy, we further revealed that the multi

SUBMITTER: Xu L 

PROVIDER: S-EPMC11299139 | biostudies-literature | 2024 Jul

REPOSITORIES: biostudies-literature