A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography.

ABSTRACT: The optoelectronic resistive random-access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in the hardware level in-sensor image cryptography. In this work, 2D hexagonal boron nitride based optoelectronic RRAM is fabricated with semitransparent noble metal (Ag or Au) as top electrodes, which can simultaneous capture color image and generate physically unclonable function (PUF) key for in-sensor color image cryptography. Surface plasmons of noble metals enable the strong light absorption to realize an efficient modulation of filament growth at nanoscale. Resistive switching curves show that the optical stimuli can impede the filament aggregation and promote the filament annihilation, which originates from phototherma

SUBMITTER: Yang Q 

PROVIDER: S-EPMC11304321 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature