Volatile tin oxide memristor for neuromorphic computing.

ABSTRACT: The rise of neuromorphic systems has addressed the shortcomings of current computing architectures, especially regarding energy efficiency and scalability. These systems use cutting-edge technologies such as Pt/SnO_x/TiN memristors, which efficiently mimic synaptic behavior and provide potential solutions to modern computing challenges. Moreover, their unipolar resistive switching ability enables precise modulation of the synaptic weights, facilitating energy-efficient parallel processing that is similar to biological synapses. Additionally, memristors' spike-rate-dependent plasticity enhances the adaptability of neural circuits, offering promising applications in intelligent computing. Integrating memristors into edge computing architectures further highlights their importance i

SUBMITTER: Ju D 

PROVIDER: S-EPMC11315111 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature